The new n+pvnp+ structure for the avalanche diode was proposed some years ago to improve the frequency characteristics. This type of the diode was named as the Double Avalanche Region (DAR) IMPATT diode. This structure includes the two avalanche regions inside the diode. The charge carriers multiply in the avalanche region and than drift along the drift zone v with the constant speed. These carriers multiply ones again into another avalanche zone. The phase delay, which was produced by means of two avalanche zones and the drift zone v is sufficient for the negative resistance obtain for the wide frequency region. The characteristics of the DAR IMPATT diode can be analyzed on the basis of the numerical precise model. In this work we develop the numerical model of the diode, which permit analyses the physical processes into the DAR structure. The admittance characteristics of the diode were analyzed in very wide frequency region. The admittance and generating power dependencies from the amplitude of the first harmonic voltage were analyzed too. The obtained results serve as the first step to the more profound analysis and structure optimization of the DAR diodes.
Citation:
R. De La Cruz, A. Zemliak, "Characteristics of the Double Avalanche Region IMPATT Diode in Millimetric Range," conielecomp, pp.223, 14th International Conference on Electronics, Communications and Computers, 2004
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