Design, Characterization & Modelling of a CMOS Magnetic Field Sensor

Munich, Germany March 09-March 12

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http://doi.ieeecomputersociety.org/10.1109/DATE.1999.761128

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	ASCII Text	x
	L. Latorre, Y. Bertrand, P. Hazard, F. Pressecq, P. Nouet, "Design, Characterization & Modelling of a CMOS Magnetic Field Sensor," Design, Automation and Test in Europe Conference and Exhibition, pp. 239, Design, Automation and Test in Europe (DATE '99), 1999.

	BibTex	x
	@article{ 10.1109/DATE.1999.761128, author = {L. Latorre and Y. Bertrand and P. Hazard and F. Pressecq and P. Nouet}, title = {Design, Characterization & Modelling of a CMOS Magnetic Field Sensor}, journal ={Design, Automation and Test in Europe Conference and Exhibition}, volume = {0}, year = {1999}, issn = {1530-1591}, pages = {239}, doi = {http://doi.ieeecomputersociety.org/10.1109/DATE.1999.761128}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Design, Automation and Test in Europe Conference and Exhibition TI - Design, Characterization & Modelling of a CMOS Magnetic Field Sensor SN - 1530-1591 SP EP A1 - L. Latorre, A1 - Y. Bertrand, A1 - P. Hazard, A1 - F. Pressecq, A1 - P. Nouet, PY - 1999 VL - 0 JA - Design, Automation and Test in Europe Conference and Exhibition ER -

This paper presents both the design and the characterization of a full CMOS magnetic field sensor. As an alternative to Hall effect sensors, it acts as a microscopic cantilever, deformed under the action of the Lorentz's force.

Citation:

L. Latorre, Y. Bertrand, P. Hazard, F. Pressecq, P. Nouet, "Design, Characterization & Modelling of a CMOS Magnetic Field Sensor," date, pp.239, Design, Automation and Test in Europe (DATE '99), 1999

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