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High-Frequency Nonlinear Amplifier Model for the Efficient Evaluation of Inband Distortion Under Nonlinear Load-Pull Conditions
Paris, France March 04-March 08
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DATE.2002.9983602002 Design, Automation and Test in E ...
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G. Vandersteen, P. Wambacq, S. Donnay, F. Verbeyst, "High-Frequency Nonlinear Amplifier Model for the Efficient Evaluation of Inband Distortion Under Nonlinear Load-Pull Conditions," Design, Automation and Test in Europe Conference and Exhibition, pp. 0586, 2002 Design, Automation and Test in Europe Conference and Exhibition (DATE'02), 2002.
 
 
BibTex
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@article{ 10.1109/DATE.2002.998360,
author = {G. Vandersteen and P. Wambacq and S. Donnay and F. Verbeyst},
title = {High-Frequency Nonlinear Amplifier Model for the Efficient Evaluation of Inband Distortion Under Nonlinear Load-Pull Conditions},
journal ={Design, Automation and Test in Europe Conference and Exhibition},
volume = {0},
year = {2002},
isbn = {0-7695-1471-5},
pages = {0586},
doi = {http://doi.ieeecomputersociety.org/10.1109/DATE.2002.998360},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Design, Automation and Test in Europe Conference and Exhibition
TI - High-Frequency Nonlinear Amplifier Model for the Efficient Evaluation of Inband Distortion Under Nonlinear Load-Pull Conditions
SN - 0-7695-1471-5
SP
EP
A1 - G. Vandersteen,
A1 - P. Wambacq,
A1 - S. Donnay,
A1 - F. Verbeyst,
PY - 2002
VL - 0
JA - Design, Automation and Test in Europe Conference and Exhibition
ER -
 
Designing complex analog systems needs different abstraction levels to reduce the overall complexity. The required level of abstraction depends on the accuracy and the purpose of the model. High-frequency amplifier models can vary from simple transfer functions for efficient bit-error- rate analysis up to detailed transistor level descriptions for accurate load-pull prediction. This paper introduces a nonlinear black-box model for high-frequency amplifiers. It extends the linear S-parameter representation to enable both efficient system-level simulations and load-pull prediction. Both are demonstrated on the measurements of a high-frequency amplifier excited using a WLAN - OFDM modulation.
Citation:
G. Vandersteen, P. Wambacq, S. Donnay, F. Verbeyst, "High-Frequency Nonlinear Amplifier Model for the Efficient Evaluation of Inband Distortion Under Nonlinear Load-Pull Conditions," date, pp.0586, 2002 Design, Automation and Test in Europe Conference and Exhibition (DATE'02), 2002
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