This paper presents a digital pixel sensor array, in which the photodiode sensor, the analogue to digital conversion circuitry, and an 8-bit memory are combined in the 45?m ?45?m pixel, yielding a 12% fill factor. The conversion is performed by measuring the time taken for the photodiode, operating in direct integration mode, to discharge from its reset voltage to a reference voltage. An on chip control circuit is used to compensate for the non-linear relationship between the photocurrent and the integration time. The 64 ? 64 pixel array is manufactured using a standard 0.35 ?m, five metal, digital CMOS process.
Citation:
Alistair Kitchen, Abdesselam Bouzerdoum, Amine Bermak, "Time Domain Analogue to Digital Conversion in a Digital Pixel Sensor Array," delta, pp.108, Second IEEE International Workshop on Electronic Design, Test and Applications, 2004