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Reliability and Yield: A Joint Defect-Oriented Approach
Cannes, France October 10-October 13
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DFT.2004.5119th IEEE International Symposium on ...
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Roman Barsky, Israel A. Wagner, "Reliability and Yield: A Joint Defect-Oriented Approach," Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on, pp. 2-10, 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'04), 2004.
 
 
BibTex
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@article{ 10.1109/DFT.2004.51,
author = {Roman Barsky and Israel A. Wagner},
title = {Reliability and Yield: A Joint Defect-Oriented Approach},
journal ={Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on},
volume = {0},
year = {2004},
issn = {1550-5774},
pages = {2-10},
doi = {http://doi.ieeecomputersociety.org/10.1109/DFT.2004.51},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on
TI - Reliability and Yield: A Joint Defect-Oriented Approach
SN - 1550-5774
SP2
EP10
A1 - Roman Barsky,
A1 - Israel A. Wagner,
PY - 2004
KW - null
VL - 0
JA - Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on
ER -
 
Roman Barsky, Technion, Haifa, Israel
Israel A. Wagner, IBM Haifa Labs, Israel
We present a model for computing the probability of a parametric failure due to a spot defect. The analysis is based on electromigration in conductors under unidirectional current stress. Analytical solution is given for simple layout and simulations for a more complicated case. Then we show that in some cases electromigration-dependent parametric defects can make a significant contribution to the total yield estimation.
Citation:
Roman Barsky, Israel A. Wagner, "Reliability and Yield: A Joint Defect-Oriented Approach," dft, pp.2-10, 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'04), 2004
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