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Modeling Yield of Carbon-Nanotube/Silicon-Nanowire FET-Based Nanoarray Architecture with h-hot Addressing Scheme
Cannes, France October 10-October 13
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DFT.2004.3919th IEEE International Symposium on ...
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Shanrui Zhang, University of Missouri-Rolla
Minsu Choi, University of Missouri-Rolla
Nohpill Park, Oklahoma State University, Stillwater
With molecular-scale materials, devices and fabrication techniques recently begin developed, high-density computing systems in nanometer domain emerge. An array-based nanoarchitecture has been recently proposed based on nanowires such as carbon nanotubes (CNTs) and silicon nanowires (SiNWs). High-density nanoarray-based systems consisting of nanometer-scale elements are likely to have many imperfections; thus, defect-tolerance is considered as one of the most significant challenges. In this paper, we propose a probabilistic yield model for the array-based nanoarchitecture. The proposed yield model can be used 1) to accurately estimate the raw and net array densities, and 2) to design and optimize more defect and fault-tolerant systems based on the array-based nanoarchitecture. As a case study, the proposed yield model is applied to the defect-tolerant addressing scheme called h-hot addressing and simulation results are discussed.
Citation:
Shanrui Zhang, Minsu Choi, Nohpill Park, "Modeling Yield of Carbon-Nanotube/Silicon-Nanowire FET-Based Nanoarray Architecture with h-hot Addressing Scheme," dft, pp.356-364, 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'04), 2004
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