loading...
Operating Region Modelling of Deep-submicron CMOS Buffers Driving Global Scope Inductive Interconnects
Belek-Antalya, Turkey September 01-September 06
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DSD.2003.1231914Euromicro Symposium on Digital System ...
 This Article 
 
Buy PURCHASE ARTICLE: $19
PDF
HTML
Buy IEEE Xplore Subscribers
 
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
ASCII Text
x 
 
Gregorio Cappuccino, "Operating Region Modelling of Deep-submicron CMOS Buffers Driving Global Scope Inductive Interconnects," Digital Systems Design, Euromicro Symposium on, pp. 138, Euromicro Symposium on Digital Systems Design (DSD'03), 2003.
 
 
BibTex
x
 
@article{ 10.1109/DSD.2003.1231914,
author = {Gregorio Cappuccino},
title = {Operating Region Modelling of Deep-submicron CMOS Buffers Driving Global Scope Inductive Interconnects},
journal ={Digital Systems Design, Euromicro Symposium on},
volume = {0},
year = {2003},
isbn = {0-7695-2003-0},
pages = {138},
doi = {http://doi.ieeecomputersociety.org/10.1109/DSD.2003.1231914},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Digital Systems Design, Euromicro Symposium on
TI - Operating Region Modelling of Deep-submicron CMOS Buffers Driving Global Scope Inductive Interconnects
SN - 0-7695-2003-0
SP
EP
A1 - Gregorio Cappuccino,
PY - 2003
KW - null
VL - 0
JA - Digital Systems Design, Euromicro Symposium on
ER -
 
Gregorio Cappuccino, DEIS - University of Calabria - Rende (CS) - ITALY
The actual operation of a complementary metal-oxide- semiconductor (CMOS) gate driving long resistance - inductance - capacitance (RLC) interconnects is investigated in this paper. Using the alpha-law model, inductance effects of long on-chip interconnects on the operating region of submicron CMOS line-driver transistors are analysed. A computationally efficient closed form expression for the time the MOS transistors of a line driver actually operate in the saturation region is also presented. The accuracy of the novel expression, particularly suitable for CAD tools implementation, is within 15% as compared to SPICE simulations for a wide range of line parameters.
Citation:
Gregorio Cappuccino, "Operating Region Modelling of Deep-submicron CMOS Buffers Driving Global Scope Inductive Interconnects," dsd, pp.138, Euromicro Symposium on Digital Systems Design (DSD'03), 2003
Usage of this product signifies your acceptance of the Terms of Use.