Self-Assembly Based Approaches for Metal/Molecule/Semiconductor Nanoelectronic Circuits

Ann Arbor, Michigan March 04-March 06

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http://doi.ieeecomputersociety.org/10.1109/GLSV.1999.757389

Ninth Great Lakes Symposium on VLSI

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	D.B. Janes, R.P. Andres, E.H. Chen, J. Dicke, V.R. Kolagunta, J. Lauterbach, T. Lee, J. Liu, M.R. Melloch, E.L. Peckham, T. Pletcher, R. Reifenberger, H.J. Ueng, B.L. Walsh, J.M. Woodall, C. P. Kubiak, B. Kasibhatla, "Self-Assembly Based Approaches for Metal/Molecule/Semiconductor Nanoelectronic Circuits," Great Lakes Symposium on VLSI, pp. 114, Ninth Great Lakes Symposium on VLSI, 1999.

	BibTex	x
	@article{ 10.1109/GLSV.1999.757389, author = {D.B. Janes and R.P. Andres and E.H. Chen and J. Dicke and V.R. Kolagunta and J. Lauterbach and T. Lee and J. Liu and M.R. Melloch and E.L. Peckham and T. Pletcher and R. Reifenberger and H.J. Ueng and B.L. Walsh and J.M. Woodall and C. P. Kubiak and B. Kasibhatla}, title = {Self-Assembly Based Approaches for Metal/Molecule/Semiconductor Nanoelectronic Circuits}, journal ={Great Lakes Symposium on VLSI}, volume = {0}, year = {1999}, issn = {1066-1395}, pages = {114}, doi = {http://doi.ieeecomputersociety.org/10.1109/GLSV.1999.757389}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

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	TY - CONF JO - Great Lakes Symposium on VLSI TI - Self-Assembly Based Approaches for Metal/Molecule/Semiconductor Nanoelectronic Circuits SN - 1066-1395 SP EP A1 - D.B. Janes, A1 - R.P. Andres, A1 - E.H. Chen, A1 - J. Dicke, A1 - V.R. Kolagunta, A1 - J. Lauterbach, A1 - T. Lee, A1 - J. Liu, A1 - M.R. Melloch, A1 - E.L. Peckham, A1 - T. Pletcher, A1 - R. Reifenberger, A1 - H.J. Ueng, A1 - B.L. Walsh, A1 - J.M. Woodall, A1 - C. P. Kubiak, A1 - B. Kasibhatla, PY - 1999 VL - 0 JA - Great Lakes Symposium on VLSI ER -

D.B. Janes, Purdue University

R.P. Andres, Purdue University

E.H. Chen, Purdue University

J. Dicke, Purdue University

V.R. Kolagunta, Purdue University

J. Lauterbach, Purdue University

T. Lee, Purdue University

J. Liu, Purdue University

M.R. Melloch, Purdue University

E.L. Peckham, Purdue University

T. Pletcher, Purdue University

R. Reifenberger, Purdue University

H.J. Ueng, Purdue University

B.L. Walsh, Purdue University

J.M. Woodall, Purdue University

C. P. Kubiak, University of California at San Diego

B. Kasibhatla, University of California at San Diego

This paper describes a technological approach which combines the nanoscale elements available from molecular devices and self-assembled molecular/nanoparticle systems with semiconductor devices which can provide the gain or bistability required for computational functionality. The architectural motivation for these configurations and experimental demonstrations of several key technologies for this hybrid approach are described.

Citation:

D.B. Janes, R.P. Andres, E.H. Chen, J. Dicke, V.R. Kolagunta, J. Lauterbach, T. Lee, J. Liu, M.R. Melloch, E.L. Peckham, T. Pletcher, R. Reifenberger, H.J. Ueng, B.L. Walsh, J.M. Woodall, C. P. Kubiak, B. Kasibhatla, "Self-Assembly Based Approaches for Metal/Molecule/Semiconductor Nanoelectronic Circuits," glsvlsi, pp.114, Ninth Great Lakes Symposium on VLSI, 1999

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