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New Challenges Emerging on the Design of VLSI Circuits Made of MOSFETs Using New Gate Dielectric Materials
San Jose, California March 22-March 24
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2004.12836565th International Symposium on Qualit ...
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N. Konofaos, G. Ph. Alexiou, "New Challenges Emerging on the Design of VLSI Circuits Made of MOSFETs Using New Gate Dielectric Materials," Quality Electronic Design, International Symposium on, pp. 92-97, 5th International Symposium on Quality Electronic Design (ISQED'04), 2004.
 
 
BibTex
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@article{ 10.1109/ISQED.2004.1283656,
author = {N. Konofaos and G. Ph. Alexiou},
title = {New Challenges Emerging on the Design of VLSI Circuits Made of MOSFETs Using New Gate Dielectric Materials},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2004},
issn = {2003116307},
pages = {92-97},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2004.1283656},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - New Challenges Emerging on the Design of VLSI Circuits Made of MOSFETs Using New Gate Dielectric Materials
SN - 2003116307
SP92
EP97
A1 - N. Konofaos,
A1 - G. Ph. Alexiou,
PY - 2004
KW - null
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
N. Konofaos, University of Patras
G. Ph. Alexiou, University of Patras
While Quality Electronic Design issues regarding typical MOSFETs constructed by well established techniques and made of SiO2 gate dielectrics are yet to optimised, new issues regarding the implementation of MOSFETs having gates made of high-k dielectric materials other than SiO2 are being raised during the last years. Parameters such as the high dielectric constant values, extra oxide charges and process related defects have to be taken into account. In this paper, such issues are addressed. The case replacing commonly used parameters of the MOSFET modelling with new ones that will take into account the presence of a material with different properties than that of SiO2 is presented and proposals are made. Moreover, a case study is presented, where a memory device is examined. An overall estimation of the proposed procedure is attempted and further work is proposed.
Citation:
N. Konofaos, G. Ph. Alexiou, "New Challenges Emerging on the Design of VLSI Circuits Made of MOSFETs Using New Gate Dielectric Materials," isqed, pp.92-97, 5th International Symposium on Quality Electronic Design (ISQED'04), 2004
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