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Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors
Arlington, Virginia July 19-July 21
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MSE.1999.787042IEEE International Conference on Micr ...
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D. Guillet, K. Mourgues, R. Rogel, H. Lhermite, O. Bonnaud, "Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors," Microelectronics Systems Education, IEEE International Conference on/Multimedia Software Engineering, International Symposium on, pp. 69, IEEE International Conference on Microelectronic Systems Education, 1999.
 
 
BibTex
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@article{ 10.1109/MSE.1999.787042,
author = {D. Guillet and K. Mourgues and R. Rogel and H. Lhermite and O. Bonnaud},
title = {Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors},
journal ={Microelectronics Systems Education, IEEE International Conference on/Multimedia Software Engineering, International Symposium on},
volume = {0},
year = {1999},
issn = {1530-2024},
pages = {69},
doi = {http://doi.ieeecomputersociety.org/10.1109/MSE.1999.787042},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Microelectronics Systems Education, IEEE International Conference on/Multimedia Software Engineering, International Symposium on
TI - Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors
SN - 1530-2024
SP
EP
A1 - D. Guillet,
A1 - K. Mourgues,
A1 - R. Rogel,
A1 - H. Lhermite,
A1 - O. Bonnaud,
PY - 1999
VL - 0
JA - Microelectronics Systems Education, IEEE International Conference on/Multimedia Software Engineering, International Symposium on
ER -
 
This tutorial is intended to graduate students specialized in microelectronics formation. This training allows the students to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium alloy has been fabricated and electrically characterized. This experiment allowed the student to work on several types of process steps and to evaluate the role of the active layer on the electrical characteristics of a transistor.
Citation:
D. Guillet, K. Mourgues, R. Rogel, H. Lhermite, O. Bonnaud, "Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors," mse, pp.69, IEEE International Conference on Microelectronic Systems Education, 1999
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