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A New Single Ended Sense Amplifier for Low Voltage Embedded EEPROM Non Volatile Memories
Isle of Bendor, France July 10-July 12
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MTDT.2002.1029776The 2002 IEEE International Workshop ...
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Caroline Papaix, Jean Michel Daga, "A New Single Ended Sense Amplifier for Low Voltage Embedded EEPROM Non Volatile Memories," Memory Technology, Design and Testin, IEEE International Workshop on, pp. 149, The 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT 2002), 2002.
 
 
BibTex
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@article{ 10.1109/MTDT.2002.1029776,
author = {Caroline Papaix and Jean Michel Daga},
title = {A New Single Ended Sense Amplifier for Low Voltage Embedded EEPROM Non Volatile Memories},
journal ={Memory Technology, Design and Testin, IEEE International Workshop on},
volume = {0},
year = {2002},
issn = {1087-4852},
pages = {149},
doi = {http://doi.ieeecomputersociety.org/10.1109/MTDT.2002.1029776},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Memory Technology, Design and Testin, IEEE International Workshop on
TI - A New Single Ended Sense Amplifier for Low Voltage Embedded EEPROM Non Volatile Memories
SN - 1087-4852
SP
EP
A1 - Caroline Papaix,
A1 - Jean Michel Daga,
PY - 2002
KW - null
VL - 0
JA - Memory Technology, Design and Testin, IEEE International Workshop on
ER -
 
Caroline Papaix, ATMEL ROUSSET and Montpellier University
Jean Michel Daga, ATMEL ROUSSET
A new single ended sense amplifier is presented in this paper. It is based on a very simple direct current-voltage conversion. It has been designed in standard CMOS process for embedded non-volatile memories. Its performances are compared to one of the actually most integrated sense amplifiers, based on differential structures. A 40% faster access time has been obtained at 1.8V.
Citation:
Caroline Papaix, Jean Michel Daga, "A New Single Ended Sense Amplifier for Low Voltage Embedded EEPROM Non Volatile Memories," mtdt, pp.149, The 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT 2002), 2002
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