Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC)
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| Isle of Bendor, France July 10-July 12 |
This paper presents a complete 90nm CMOS technology platform dedicated to advanced SoC manufacturing, featuring 16 Å EOT-70nm transistors (standard process) or 21 -90nm transistors (Low Power process) as well as 2.5 or 3.3V I/O transistors, copper interconnects and SiOC low-k IMD (k=2.9). The main critical process steps are described and electrical results are discussed. Moreover, using advanced lithographic tools, fully functional 1Mbit SRAM instances, based on a highly manufacturable 6T 1.36?m? memory cell, have been processed. The cell is detailed and its features, both electrical and morphological, are discussed.
Citation:
T. Devoivre, M. Lunenborg, C. Julien, J-P. Carrere, P. Ferreira, W. J. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P-J. Goirand, R. Palla, I. Thomas, F. Guyader, D. Roy, B. Borot, N. Planes, S. Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond, "Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC)," mtdt, pp.157, The 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT 2002), 2002
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