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A 40ns Random Access Time Low Voltage 2Mbits EEPROM Memory for Embedded Applications
San Jose, California July 28-July 29
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MTDT.2003.12223652003 International Workshop on Memory ...
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Jean-Michel Daga, Caroline Papaix, Emmanuel Racape, Marylene Combe, Vincent Sialelli, Jeanine Guichaoua, "A 40ns Random Access Time Low Voltage 2Mbits EEPROM Memory for Embedded Applications," Memory Technology, Design and Testin, IEEE International Workshop on, pp. 81, 2003 International Workshop on Memory Technology, Design and Testing (MTDT'03), 2003.
 
 
BibTex
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@article{ 10.1109/MTDT.2003.1222365,
author = {Jean-Michel Daga and Caroline Papaix and Emmanuel Racape and Marylene Combe and Vincent Sialelli and Jeanine Guichaoua},
title = {A 40ns Random Access Time Low Voltage 2Mbits EEPROM Memory for Embedded Applications},
journal ={Memory Technology, Design and Testin, IEEE International Workshop on},
volume = {0},
year = {2003},
issn = {1087-4852},
pages = {81},
doi = {http://doi.ieeecomputersociety.org/10.1109/MTDT.2003.1222365},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Memory Technology, Design and Testin, IEEE International Workshop on
TI - A 40ns Random Access Time Low Voltage 2Mbits EEPROM Memory for Embedded Applications
SN - 1087-4852
SP
EP
A1 - Jean-Michel Daga,
A1 - Caroline Papaix,
A1 - Emmanuel Racape,
A1 - Marylene Combe,
A1 - Vincent Sialelli,
A1 - Jeanine Guichaoua,
PY - 2003
KW - null
VL - 0
JA - Memory Technology, Design and Testin, IEEE International Workshop on
ER -
 
Jean-Michel Daga, ATMEL, Zone Industrielle
Caroline Papaix, ATMEL, Zone Industrielle
Emmanuel Racape, ATMEL, Zone Industrielle
Marylene Combe, ATMEL, Zone Industrielle
Vincent Sialelli, ATMEL, Zone Industrielle
Jeanine Guichaoua, ATMEL, Zone Industrielle
2Mbits EEPROM memory has been designed using the ATMEL 0.18 ?m embedded technology. On silicon program and read access time measurements are given, and an optimized production testing flow is proposed.
Citation:
Jean-Michel Daga, Caroline Papaix, Emmanuel Racape, Marylene Combe, Vincent Sialelli, Jeanine Guichaoua, "A 40ns Random Access Time Low Voltage 2Mbits EEPROM Memory for Embedded Applications," mtdt, pp.81, 2003 International Workshop on Memory Technology, Design and Testing (MTDT'03), 2003
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