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An Electrical Simulation Model for the Chalcogenide Phase-Change Memory Cell
San Jose, California July 28-July 29
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MTDT.2003.12223662003 International Workshop on Memory ...
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Daniel Salamon, Bruce F. Cockburn, "An Electrical Simulation Model for the Chalcogenide Phase-Change Memory Cell," Memory Technology, Design and Testin, IEEE International Workshop on, pp. 86, 2003 International Workshop on Memory Technology, Design and Testing (MTDT'03), 2003.
 
 
BibTex
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@article{ 10.1109/MTDT.2003.1222366,
author = {Daniel Salamon and Bruce F. Cockburn},
title = {An Electrical Simulation Model for the Chalcogenide Phase-Change Memory Cell},
journal ={Memory Technology, Design and Testin, IEEE International Workshop on},
volume = {0},
year = {2003},
issn = {1087-4852},
pages = {86},
doi = {http://doi.ieeecomputersociety.org/10.1109/MTDT.2003.1222366},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Memory Technology, Design and Testin, IEEE International Workshop on
TI - An Electrical Simulation Model for the Chalcogenide Phase-Change Memory Cell
SN - 1087-4852
SP
EP
A1 - Daniel Salamon,
A1 - Bruce F. Cockburn,
PY - 2003
KW - null
VL - 0
JA - Memory Technology, Design and Testin, IEEE International Workshop on
ER -
 
Daniel Salamon, University of Alberta
Bruce F. Cockburn, University of Alberta
Chalcogenide glass is being investigated by several companies as the basis for a scalable and embeddable nonvolatile phase-change memory technology. One phase is a high-resistance amorphous phase that is obtained by melting a small volume of glass using ohmic heating, and then quenching it. The second phase is a low-resistance crystalline phase that is obtained by heating the glass to just below the melting point to promote recrystallization. This paper describes two models for such a cell. The first is a very simple single-element, lumped model that exhibits correct phase transition behavior, but is unrealistic in its sensitivity to the heating current pulses. The second, multiple-element model is able to more realistically represent cell heating and cooling behavior, and appears to be the more suitable basis for an electrical simulation model.
Citation:
Daniel Salamon, Bruce F. Cockburn, "An Electrical Simulation Model for the Chalcogenide Phase-Change Memory Cell," mtdt, pp.86, 2003 International Workshop on Memory Technology, Design and Testing (MTDT'03), 2003
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