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Effect of Scaling on the Non-quasi-static Behaviour of the MOSFET for RF IC ?s
New Delhi, India January 04-January 08
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ICVD.2003.118312216th International Conference on VLSI ...
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R. Srinivasan, Navakanta Bhat, "Effect of Scaling on the Non-quasi-static Behaviour of the MOSFET for RF IC ?s," VLSI Design, International Conference on, pp. 105, 16th International Conference on VLSI Design, 2003.
 
 
BibTex
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@article{ 10.1109/ICVD.2003.1183122,
author = {R. Srinivasan and Navakanta Bhat},
title = {Effect of Scaling on the Non-quasi-static Behaviour of the MOSFET for RF IC ?s},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2003},
issn = {1063-9667},
pages = {105},
doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.2003.1183122},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Effect of Scaling on the Non-quasi-static Behaviour of the MOSFET for RF IC ?s
SN - 1063-9667
SP
EP
A1 - R. Srinivasan,
A1 - Navakanta Bhat,
PY - 2003
KW - null
VL - 0
JA - VLSI Design, International Conference on
ER -
 
R. Srinivasan, Indian Institute of Science
Navakanta Bhat, Indian Institute of Science
The effect of scaling (1 ?m to 0 .09 ?m) on the non-quasi-static (NQS)behaviour of the MOSFET has bee studied using process and device simulation. It is shown that under fixed gate (Vgs) and drain (Vds) bias voltages the NQS transition frequency (fNQS) scales as 1/Leff rather than 1/L2 eff due to velocity saturation effect. However under the practical scaling guidelines, considering the scaling of supply voltage as well, fNQS shows turn around effect at the sub 100nm regime. The relation between unity gain frequency (ft) and fNQS is also evaluated and it is shown that ft and fNQS have similar trends with scaling.
Citation:
R. Srinivasan, Navakanta Bhat, "Effect of Scaling on the Non-quasi-static Behaviour of the MOSFET for RF IC ?s," vlsid, pp.105, 16th International Conference on VLSI Design, 2003
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