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Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies
Mumbai, India January 05-January 09
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ICVD.2004.126099817th International Conference on VLSI ...
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Anurag Chaudhry, M. Jagadesh Kumar, "Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies," VLSI Design, International Conference on, pp. 662, 17th International Conference on VLSI Design, 2004.
 
 
BibTex
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@article{ 10.1109/ICVD.2004.1260998,
author = {Anurag Chaudhry and M. Jagadesh Kumar},
title = {Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2004},
issn = {1063-9667},
pages = {662},
doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.2004.1260998},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies
SN - 1063-9667
SP
EP
A1 - Anurag Chaudhry,
A1 - M. Jagadesh Kumar,
PY - 2004
KW - null
VL - 0
JA - VLSI Design, International Conference on
ER -
 
Anurag Chaudhry, Indian Institute of Technology, New Delhi
M. Jagadesh Kumar, Indian Institute of Technology, New Delhi
The novel features of a fully depleted (FD) dual-material gate (DMG) SOI MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two-dimensional (2-D) numerical simulation studies demonstrate the novel features as threshold voltage roll-up and simultaneous transconductance enhancement and suppression of short-channel effects (SCE's) offered by the DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate material. This work illustrates the benefits of high performance DMG SOI MOS devices over their single material gate (SMG) counterparts and provides an incentive for their experimental exploration.
Citation:
Anurag Chaudhry, M. Jagadesh Kumar, "Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies," vlsid, pp.662, 17th International Conference on VLSI Design, 2004
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