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A fault model for switch-level simulation of gate-to-drain shorts
Princeton, NJ April 28-May 01
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTEST.1996.51088714th IEEE VLSI Test Symposium (VTS '96)
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P. Dahlgren, Dept. of Comput. Eng., Chalmers Univ. of Technol., Goteborg, Sweden
P. Liden, Dept. of Comput. Eng., Chalmers Univ. of Technol., Goteborg, Sweden
An efficient algorithm for analyzing a subset of transistor-level bridging faults is proposed. The complex analogue behavior of gate-to-drain shorts is handled using a network primitive into which the fault injected transistor is mapped. The resistances of the surrounding subnetworks obtained from a linear switch-level model are used together with a simple iteration scheme to predict the voltage at the shortened nodes. Fault simulation experiments were conducted and the algorithm shows good agreement with electrical-level analysis.
Index Terms:
integrated circuit modelling; fault diagnosis; fault model; switch-level simulation; gate-to-drain shorts; algorithm; transistor-level bridging faults; network primitive; subnetworks; iteration; electrical-level analysis
Citation:
P. Dahlgren, P. Liden, "A fault model for switch-level simulation of gate-to-drain shorts," vts, pp.414, 14th IEEE VLSI Test Symposium (VTS '96), 1996
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