loading...
Very Low Voltage Testing of SOI Integrated Circuits
Monterey, California April 28-May 02
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTS.2002.101110620th IEEE VLSI Test Symposium
 This Article 
 
PDF
HTML
 
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
Eric MacDonald, IBM Microelectronics Division
Nur A. Touba, University of Texas at Austin
Very Low Voltage (VLV) testing has been proposed to increase flaw detection in bulk silicon CMOS integrated circuits and this paper explores these and additional advantages in the context of testing Silicon-On-Insulator (SOI) integrated circuits. In the VLV regime, the history effect, which describes how delays through SOI circuits vary based on a circuit?s recent switching history, is amplified.This amplification improves the ability at test to monitor fabrication process shifts, which may lead to excessive delay variation under normal operating conditions. VLV test techniques can be used to identify parts that have been fabricated outside the specified process window. In addition, the use of VLV testing is investigated to detect defects that have been described in previous VLV papers, however now addressed in the context of SOI technology.
Citation:
Eric MacDonald, Nur A. Touba, "Very Low Voltage Testing of SOI Integrated Circuits," vts, pp.0025, 20th IEEE VLSI Test Symposium, 2002
Usage of this product signifies your acceptance of the Terms of Use.