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Use of Multiple IDDQ Test Metrics for Outlier Identification
Napa Valley, California April 27-May 01
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTEST.2003.119763021st IEEE VLSI Test Symposium
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Sagar S. Sabade, Texas A&M University
D. M. H. Walker, Texas A&M University
With increasing circuit complexity and reliability requirements, screening outlier chips is an increasingly important test challenge. This is especially true for IDDQ test due to increased spread in the distribution. In this paper, the concept of current ratio is extended to exploit wafer-level spatial correlation. Two metrics - current ratio and neighbor current ratio - are combined to screen outliers at the wafer level. We demonstrate that a single metric alone cannot screen all outliers, however, their combination can be used for effectively screening outlier chips. Analyses based on industrial test data are presented.
Index Terms:
Current ratio, neighbor current ratio, spatial correlation, outlier identification, IDDQ testing
Citation:
Sagar S. Sabade, D. M. H. Walker, "Use of Multiple IDDQ Test Metrics for Outlier Identification," vts, pp.31, 21st IEEE VLSI Test Symposium, 2003
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