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Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification
May 13-May 15
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/AMS.2008.1852008 Second Asia International Confer ...
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Zon Fazlila Mohd Ahir, Ahmad Zarif Zulkifli, Abdul Manaf Hashim, "Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification," Asia International Conference on Modelling & Simulation, pp. 990-993, 2008 Second Asia International Conference on Modelling & Simulation, 2008.
 
 
BibTex
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@article{ 10.1109/AMS.2008.185,
author = {Zon Fazlila Mohd Ahir and Ahmad Zarif Zulkifli and Abdul Manaf Hashim},
title = {Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification},
journal ={Asia International Conference on Modelling & Simulation},
volume = {0},
year = {2008},
isbn = {978-0-7695-3136-6},
pages = {990-993},
doi = {http://doi.ieeecomputersociety.org/10.1109/AMS.2008.185},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Asia International Conference on Modelling & Simulation
TI - Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification
SN - 978-0-7695-3136-6
SP990
EP993
A1 - Zon Fazlila Mohd Ahir,
A1 - Ahmad Zarif Zulkifli,
A1 - Abdul Manaf Hashim,
PY - 2008
KW - Plasma wave
KW - Interdigital
KW - Negative conductance
KW - HEMT
KW - Terahertz
VL - 0
JA - Asia International Conference on Modelling & Simulation
ER -
 
A capacitively coupled interdigital-gated HEMT structure was used to investigate the occurrence of uniformity of electric field distribution along the structure. The structure was designed and simulated using Commercial Electromagnetic Sonnet Suites software. The return loss characteristics were analyzed and evaluated. The comparison of the admittance characteristics from simulation between dc connected structure and capacitively coupled structure is carried out in order to evaluate electromagnetic wave propagation. This structure kept uniform electric field in the channel when the dc biased is applied to the interdigital gate, which modulates the potential in the channel.
Index Terms:
Plasma wave, Interdigital, Negative conductance, HEMT, Terahertz
Citation:
Zon Fazlila Mohd Ahir, Ahmad Zarif Zulkifli, Abdul Manaf Hashim, "Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification," ams, pp.990-993, 2008 Second Asia International Conference on Modelling & Simulation, 2008
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