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Power Analysis of DRAMs
Singapore December 02-December 04
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ATS.1998.741635Seventh Asian Test Symposium (ATS'98)
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Joerg Vollrath, Markus Huebl, Ernst Stahl, "Power Analysis of DRAMs," Asian Test Symposium, pp. 334, Seventh Asian Test Symposium (ATS'98), 1998.
 
 
BibTex
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@article{ 10.1109/ATS.1998.741635,
author = {Joerg Vollrath and Markus Huebl and Ernst Stahl},
title = {Power Analysis of DRAMs},
journal ={Asian Test Symposium},
volume = {0},
year = {1998},
issn = {1081-7735},
pages = {334},
doi = {http://doi.ieeecomputersociety.org/10.1109/ATS.1998.741635},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Asian Test Symposium
TI - Power Analysis of DRAMs
SN - 1081-7735
SP
EP
A1 - Joerg Vollrath,
A1 - Markus Huebl,
A1 - Ernst Stahl,
PY - 1998
VL - 0
JA - Asian Test Symposium
ER -
 
Power consumption is an important parameter for a dynamic random access memory (DRAM). Measurement of power consumption via the time dependent active current gives further insight into DRAM operation. Average current measurement techniques are presented in this paper to analyze time dependent current components and to calculate bitline and interbitline capacitances from power consumption.
Citation:
Joerg Vollrath, Markus Huebl, Ernst Stahl, "Power Analysis of DRAMs," ats, pp.334, Seventh Asian Test Symposium (ATS'98), 1998
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