CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35? CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schotkty diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.
Citation:
Woochul Jeon, John Melngailis, Robert W. Newcomb, "CMOS Schottky diode microwave power detector fabrication, Spice modeling, and applications," delta, pp.17-22, Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06), 2006