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Electrical Behavior of GOS Fault affected Domino Logic Cell
Kuala Lumpur, Malaysia January 17-January 19
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DELTA.2006.42Third IEEE International Workshop on ...
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M. Comte, S. Ohtake, H. Fujiwara, M. Renovell, "Electrical Behavior of GOS Fault affected Domino Logic Cell," Electronic Design, Test and Applications, IEEE International Workshop on, pp. 183-189, Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06), 2006.
 
 
BibTex
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@article{ 10.1109/DELTA.2006.42,
author = {M. Comte and S. Ohtake and H. Fujiwara and M. Renovell},
title = {Electrical Behavior of GOS Fault affected Domino Logic Cell},
journal ={Electronic Design, Test and Applications, IEEE International Workshop on},
volume = {0},
year = {2006},
isbn = {0-7695-2500-8},
pages = {183-189},
doi = {http://doi.ieeecomputersociety.org/10.1109/DELTA.2006.42},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Electronic Design, Test and Applications, IEEE International Workshop on
TI - Electrical Behavior of GOS Fault affected Domino Logic Cell
SN - 0-7695-2500-8
SP183
EP189
A1 - M. Comte,
A1 - S. Ohtake,
A1 - H. Fujiwara,
A1 - M. Renovell,
PY - 2006
KW - Domino logic; Gate-Oxide Short (GOS); Defect modeling; Electrical analysis Boolean test.
VL - 0
JA - Electronic Design, Test and Applications, IEEE International Workshop on
ER -
 
M. Comte, Nara Institute of Science and Technology (NAIST), Japan
S. Ohtake, Nara Institute of Science and Technology (NAIST), Japan
H. Fujiwara, Nara Institute of Science and Technology (NAIST), Japan
M. Renovell, LIRMM, France
Gate-Oxide Shorts (GOS) have an increasing impact on the integrated circuit production yield due to the reduction of the related dimensions. The detection of GOS is a challenging issue in the field of testing. This paper presents a detailed study of the impact of a GOS fault affecting a Domino logic circuit. Indeed, Domino logic specific clocked operating principle induces a different behavior from standard full CMOS cells under the effect of a GOS, which can enable GOS detection. Finally, some clues to enhance GOS detection in Domino cells are proposed.
Index Terms:
Domino logic; Gate-Oxide Short (GOS); Defect modeling; Electrical analysis Boolean test.
Citation:
M. Comte, S. Ohtake, H. Fujiwara, M. Renovell, "Electrical Behavior of GOS Fault affected Domino Logic Cell," delta, pp.183-189, Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06), 2006
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