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Quantitative Analysis of In-Field Defects in Image Sensor Arrays
Rome, Italy September 26-September 28
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DFT.2007.5922nd IEEE International Symposium on ...
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Jenny Leung, Simon Fraser University
Jozsef Dudas, Simon Fraser University
Glenn H. Chapman, Simon Fraser University
Israel Koren, University of Massachusetts
Zahava Koren, University of Massachusetts
Growth of pixel density and sensor array size increases the likelihood of developing in-field pixel defects. An ongoing study on defect development in imagers has now provided us sufficient data to be able to quantify characteristics of defect growth. Preliminary investigations have shown that defects are distributed randomly and the closest distance between two defective pixels is approximately 79-340 pixels apart. Furthermore, from an observation of 98 cluster-free defects, the diameter of the defect is estimated to be less than 2.3% of a pixel size at 99% confidence level. The fact that no defect clusters were found in the study of various digital cameras allows us to conclude that defects are not likely to be related to material degradation or imperfect fabrication but are due to environmental stress such as radiation. Furthermore, as verified by a statistical study, the absence of defect clustering provides information on the size of defects and insight into the nature of the defect development.
Citation:
Jenny Leung, Jozsef Dudas, Glenn H. Chapman, Israel Koren, Zahava Koren, "Quantitative Analysis of In-Field Defects in Image Sensor Arrays," dft, pp.526-534, 22nd IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2007), 2007
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