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A Robust 130nm-CMOS Built-In Current Sensor Dedicated to RF Applications
Southampton, United Kingdom May 21-May 21
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ETS.2006.6Eleventh IEEE European Test Symposium ...
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M. Cimino, IXL laboratory, France
H. Lapuyade, IXL laboratory, France
M. De Matos, IXL laboratory, France
T. Taris, IXL laboratory, France
Y. Deval, IXL laboratory, France
JB. B?gueret, IXL laboratory, France
An otherwise well-known ratiometric Built-In Current Sensor (BICS) dedicated to monitor the current of analog and mixed-signal building blocks highlights a dependency with regards to technology discrepancy. In this paper we present a design methodology that allows to dramatically reduce the dependency, yielding to a new version of this BICS. Taking advantage of a 130 nm VLSI CMOS technology, the BICS proposed has a peak-to-peak dispersion lower than 10 % of its output full-scale range. It makes it more suitable to implement the test functionality while maintaining the initial BICS intrinsic performances. The built-in self test methodology is illustrated by monitoring the supply current of a Low-Noise Amplifier (LNA). Measurements confirm the BICS?s low sensitivity to process variations and its transparency relative to the circuit under test (CUT).
Index Terms:
Design for testability - Built-In current sensor - Analog and mixed-signal integrated circuits - CMOS technology - Robustness.
Citation:
M. Cimino, H. Lapuyade, M. De Matos, T. Taris, Y. Deval, JB. B?gueret, "A Robust 130nm-CMOS Built-In Current Sensor Dedicated to RF Applications," ets, pp.151-158, Eleventh IEEE European Test Symposium (ETS'06), 2006
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