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Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array
New Delhi, India January 04-January 07
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ICVD.1995.5121048th International Conference on VLSI ...
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P. Sawhney, SGS-Thomson Microelectron., New Delhi, India
H. Rasheed, SGS-Thomson Microelectron., New Delhi, India
This paper describes the design and development of module generators for metallized single-port and dual-port static RAMs (SPRAM and DPRAM) for a 0.5 micron embedded-array family. These generators offer an ASIC designer the ability to choose RAMs of user-defined size with some flexibility on the aspect ratio. An automatic generator characterisation (AGC) tool developed to efficiently characterize RAM generators is discussed.
Index Terms:
SRAM chips; application specific integrated circuits; integrated circuit design; circuit CAD; static RAM generators; automatic generator characterisation tool; triple-metal embedded array; module generators; metallized SRAMs; single-port static RAMs; dual-port static RAMs; ASIC design; user-defined size; aspect ratio; SRAM chips; 0.5 micron
Citation:
P. Sawhney, H. Rasheed, "Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array," vlsid, pp.191, 8th International Conference on VLSI Design, 1995
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