Dynamic current mirrors, or SI memory cells, are widely used in analog signal processing circuits. They could be implemented using a standard cell methodology if an SI cell library is available. Aiming the creation of that library, this work presents the design of the measuring system and the interface circuit (on chip) necessary to test SI cells with precision of 450 ppm and operation frequency of 3MHz. Measurements performed on the prototypes show that the harmonics components and the noise level are 70dB smaller than the fundamental and the total harmonic distortion is 0.04%.
Index Terms:
switched current, behaviour simulation, voltage-to-current converter
Citation:
Adriano M. Pereira, Tales C. Pimenta, Robson L. Moreno, Edgar Charry R., Alberto M. Jorge, "Design of a Measurement and Interface Integrated Circuit for Characterization of Switched Current Memory Cells," vlsid, pp.240, Eleventh International Conference on VLSI Design: VLSI for Signal Processing, 1998