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Electrical Modeling for Laser Testing with Different Pulse Durations
Saint Raphael, French Riviera, France July 06-July 08
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/IOLTS.2005.2711th IEEE International On-Line Testi ...
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A. Douin, Universit? Bordeaux 1
V. Pouget, Universit? Bordeaux 1
D. Lewis, Universit? Bordeaux 1
P. Fouillat, Universit? Bordeaux 1
P. Perdu, CNES
This paper presents a simple electrical model of laser-induced currents in a single MOS transistor for different laser pulse durations. This model is validated by mixed-mode device simulations of a laser-induced fault in an SRAM cell for different laser pulse durations ranging from 100fs to 10ns. This model can be used for netlist level simulation of pulsed laser online testing in the context of radiation hardening, semi-invasive attacks, or more generally, hardware level fault injection techniques.
Citation:
A. Douin, V. Pouget, D. Lewis, P. Fouillat, P. Perdu, "Electrical Modeling for Laser Testing with Different Pulse Durations," iolts, pp.9-13, 11th IEEE International On-Line Testing Symposium, 2005
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