Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells

Lake of Como, Italy July 10-July 12

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http://doi.ieeecomputersociety.org/10.1109/IOLTS.2006.51

12th IEEE International On-Line Testi ...

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	ASCII Text	x
	G. Hubert, A. Bougerol, F. Miller, N. Buard, L. Anghel, T. Carriere, F. Wrobel, R. Gaillard, "Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells," IEEE International On-Line Testing Symposium/On-Line Testing Symposium, IEEE International, pp. 63-74, 12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006.

	BibTex	x
	@article{ 10.1109/IOLTS.2006.51, author = {G. Hubert and A. Bougerol and F. Miller and N. Buard and L. Anghel and T. Carriere and F. Wrobel and R. Gaillard}, title = {Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells}, journal ={IEEE International On-Line Testing Symposium/On-Line Testing Symposium, IEEE International}, volume = {0}, year = {2006}, isbn = {0-7695-2620-9}, pages = {63-74}, doi = {http://doi.ieeecomputersociety.org/10.1109/IOLTS.2006.51}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - IEEE International On-Line Testing Symposium/On-Line Testing Symposium, IEEE International TI - Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells SN - 0-7695-2620-9 SP63 EP74 A1 - G. Hubert, A1 - A. Bougerol, A1 - F. Miller, A1 - N. Buard, A1 - L. Anghel, A1 - T. Carriere, A1 - F. Wrobel, A1 - R. Gaillard, PY - 2006 KW - null VL - 0 JA - IEEE International On-Line Testing Symposium/On-Line Testing Symposium, IEEE International ER -

G. Hubert, EADS, Corporate Research Center

A. Bougerol, EADS, Corporate Research Center

F. Miller, EADS, Corporate Research Center

N. Buard, EADS, Corporate Research Center

L. Anghel, TIMA Laboratory

T. Carriere, EADS, Space Transportation

F. Wrobel, University of Nice-Sophia Antipolis

R. Gaillard, INFODUC

This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in Complementary Metal Oxide Semiconductor (CMOS) logic circuits: TMC DASIE (Transient Monte-Carlo Detailed Analysis of Secondary Ion Effects). The production and effects of Single-Event Transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.

Citation:

G. Hubert, A. Bougerol, F. Miller, N. Buard, L. Anghel, T. Carriere, F. Wrobel, R. Gaillard, "Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells," iolts, pp.63-74, 12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006

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