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Highly Reliable Power Aware Memory Design
Heraklion, Crete, Greece July 08-July 11
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/IOLTS.2007.3713th IEEE International On-Line Testi ...
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Costas Argyrides, University of Bristol, UK
Dhiraj K. Pradhan, University of Bristol, UK
In this paper, an efficient technique for designing RAMs for on chip correction of double errors integrated on H-tree memory architecture is discussed. The reliability of the proposed design is improved by 8X while the Mean Time To Failure is improved 3X while comparing to traditional Hamming codes for a 256Mbits memory chip. The area is sacrificed for these reliability improvements, significant power savings and the performance boost.
Citation:
Costas Argyrides, Dhiraj K. Pradhan, "Highly Reliable Power Aware Memory Design," iolts, pp.189-190, 13th IEEE International On-Line Testing Symposium (IOLTS 2007), 2007
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