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A Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors
University of Calgary, Canada May 19-May 21
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISMVL.2005.635th International Symposium on Multi ...
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Katsuhiko Degawa, Tohoku University, Japan
Takafumi Aoki, Tohoku University, Japan
Hiroshi Inokawa, NTT Corporation, Japan
Tatsuo Higuchi, Tohoku Institute of Technology, Japan
Yasuo Takahashi, Hokkaido University, Japan
This paper presents a circuit design of a two-bit-percell Content-Addressable Memory (CAM) using Single-Electron Transistors (SETs). The key ideas of the proposed CAM architecture are (i) four-level data storage function implementing by a SET-based static memory cell and (ii) four-level data matching function employing periodic drain-current characteristics of SETs with dynamic phase-shift control. A simple multi-gate SET can be used to realize four-level data matching within a compact CAM cell circuit. As a result, the proposed two-bit-per-cell CAM architecture reduces the number of transistors to 1/3 compared with the conventional CAM architecture.
Citation:
Katsuhiko Degawa, Takafumi Aoki, Hiroshi Inokawa, Tatsuo Higuchi, Yasuo Takahashi, "A Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors," ismvl, pp.32-38, 35th International Symposium on Multiple-Valued Logic (ISMVL'05), 2005
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