loading...
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
San Jose, California March 27-March 29
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2006.57th International Symposium on Qualit ...
 This Article 
 
Buy PURCHASE ARTICLE: $19
PDF
HTML
Buy IEEE Xplore Subscribers
 
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
ASCII Text
x 
 
Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang, "A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs," Quality Electronic Design, International Symposium on, pp. 127-132, 7th International Symposium on Quality Electronic Design (ISQED'06), 2006.
 
 
BibTex
x
 
@article{ 10.1109/ISQED.2006.5,
author = {Jin He and Xing Zhang and Ganggang Zhang and Yangyuan Wang},
title = {A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2006},
isbn = {0-7695-2523-7},
pages = {127-132},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2006.5},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
SN - 0-7695-2523-7
SP127
EP132
A1 - Jin He,
A1 - Xing Zhang,
A1 - Ganggang Zhang,
A1 - Yangyuan Wang,
PY - 2006
KW - null
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
Jin He, Peking University, Beijing, China
Xing Zhang, Peking University, Beijing, China
Ganggang Zhang, Peking University, Beijing, China
Yangyuan Wang, Peking University, Beijing, .China
This paper presents a carrier-based analytic model for Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. It is based on the exact solution of the Poisson-Boltzamann equation by a carrier approach and the current continuity equation with the back interface oxide layer effect. The mode is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting-parameters, being ideal framework for UTB MOSFET compact modelling development. We have demonstrated that the I-V characteristics obtained by this model agree with twodimensional numerical simulations for all ranges of gate and drain voltages.
Citation:
Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang, "A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs," isqed, pp.127-132, 7th International Symposium on Quality Electronic Design (ISQED'06), 2006
Usage of this product signifies your acceptance of the Terms of Use.


Suggestions