Multi-Gate Field Effect Transistors (MuGFET) such as FinFETs and Triple-Gate FETs are the most promising device structures for sub-45nm CMOS technology nodes.The superior control of the channel due to multiple gates reduces short-channel effects and leakage currents.This opens the opportunity for further down scaling of the threshold and supply voltages and device performance improvements. Circuit performance also benefits from novel gate stack materials, reduced parasitic capacitances, and hole mobility improvement.