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Tests on Symmetry and Continuity between BSIM4 and BSIM5
San Jose, California March 26-March 28
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.1578th International Symposium on Qualit ...
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Xudong Niu, Yan Song, Bo Li, Wei Bian, Yadong Tao, Feng Liu, Jinhua Hu, Yu Chen, Frank He, "Tests on Symmetry and Continuity between BSIM4 and BSIM5," Quality Electronic Design, International Symposium on, pp. 263-268, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007.
 
 
BibTex
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@article{ 10.1109/ISQED.2007.157,
author = {Xudong Niu and Yan Song and Bo Li and Wei Bian and Yadong Tao and Feng Liu and Jinhua Hu and Yu Chen and Frank He},
title = {Tests on Symmetry and Continuity between BSIM4 and BSIM5},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2007},
isbn = {0-7695-2795-7},
pages = {263-268},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.157},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - Tests on Symmetry and Continuity between BSIM4 and BSIM5
SN - 0-7695-2795-7
SP263
EP268
A1 - Xudong Niu,
A1 - Yan Song,
A1 - Bo Li,
A1 - Wei Bian,
A1 - Yadong Tao,
A1 - Feng Liu,
A1 - Jinhua Hu,
A1 - Yu Chen,
A1 - Frank He,
PY - 2007
KW - compact model
KW - BSIM4
KW - BSIM5
KW - CMOS circuit design
KW - continuity
KW - symmetry.
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
Xudong Niu, Peking University, China
Yan Song, Peking University, China
Bo Li, Peking University, China
Wei Bian, Peking University, China
Yadong Tao, Peking University, China
Feng Liu, Peking University, China
Jinhua Hu, Peking University, China
Yu Chen, Peking University, China
Frank He, Peking University, China
This paper presents the test results on the CMOS model symmetry and continuity characteristics between BSIM4 and BSIM5 from University of California at Berkeley. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while new generation BSIM MOSFET compact model, BSIM5, demonstrates all necessary continuity and symmetry characteristics, which are very important for Analog and RF circuit design.
Index Terms:
compact model, BSIM4, BSIM5, CMOS circuit design, continuity, symmetry.
Citation:
Xudong Niu, Yan Song, Bo Li, Wei Bian, Yadong Tao, Feng Liu, Jinhua Hu, Yu Chen, Frank He, "Tests on Symmetry and Continuity between BSIM4 and BSIM5," isqed, pp.263-268, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007
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