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A Data-Driven Statistical Approach to Analyzing Process Variation in 65nm SOI Technology
San Jose, California March 26-March 28
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.88th International Symposium on Qualit ...
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This paper presents a simple yet effective method to analyze process variations using statistics on manufacturing in-line data without assuming any explicit underlying model for process variations. Our method is based on a variant of principal component analysis and is able to reveal systematic variation patterns existing on a die-to-die and wafer-to-wafer level individually. The separation of die variation from wafer variation can enhance the understanding of a nature of the process uncertainty. Our case study based on the proposed decomposition method shows that the dominating die-to-die variation and wafer-to-wafer variation represent 31% and 25% of the total variance of a large set of in-line parameters in 65nm SOI CMOS technology.
Citation:
Choongyeun Cho, Daeik Kim, Jonghae Kim, Jean-Olivier Plouchart, Daihyun Lim, Sangyeun Cho, Robert Trzcinski, "A Data-Driven Statistical Approach to Analyzing Process Variation in 65nm SOI Technology," isqed, pp.699-702, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007
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