loading...
Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices
March 17-March 19
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.1609th International Symposium on Qualit ...
 This Article 
 
Buy PURCHASE ARTICLE: $19
PDF
HTML
IEEE Xplore Subscribers
 
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
ASCII Text
x 
 
Jae Wook Kim, Boris Murmann, Robert Dutton, "Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices," Quality Electronic Design, International Symposium on, pp. 429-432, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008.
 
 
BibTex
x
 
@article{ 10.1109/ISQED.2008.160,
author = {Jae Wook Kim and Boris Murmann and Robert Dutton},
title = {Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2008},
isbn = {978-0-7695-3117-5},
pages = {429-432},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.160},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices
SN - 978-0-7695-3117-5
SP429
EP432
A1 - Jae Wook Kim,
A1 - Boris Murmann,
A1 - Robert Dutton,
PY - 2008
KW - bandgap reference
KW - germanium devices
KW - hybrid integration
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
Low-voltage hybrid silicon-germanium bandgap reference circuits that can defy the voltage scaling limits of those realized in purely silicon-based technologies are implemented. Germanium diodes replace silicon diodes in two conventional bandgap reference circuits fabricated in a 0.18-um Si CMOS process, and experimental results validate the benefit of exploiting a low bandgap material. The output references are measured as 670 mV and 310 mV with 9.3 mV (287 ppm/?C) and 4.6 mV (302 ppm/?C) variation, respectively, over 5 ~ 56 ?C. In addition, the high temperature characteristics limiting the operation range related to low bandgap are investigated.
Index Terms:
bandgap reference, germanium devices, hybrid integration
Citation:
Jae Wook Kim, Boris Murmann, Robert Dutton, "Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices," isqed, pp.429-432, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008
Usage of this product signifies your acceptance of the Terms of Use.