loading...
Overdrive Power-Gating Techniques for Total Power Minimization
Porto Alegre, Brazil March 09-March 11
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISVLSI.2007.76IEEE Computer Society Annual Symposiu ...
 This Article 
 
PDF
HTML
 
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
Mindaugas Dra?zd?ziulis, Chalmers University of Technology, SE-412 96 G?oteborg, Sweden
Per Larsson-Edefors, Chalmers University of Technology, SE-412 96 G?oteborg, Sweden
Lars "J" Svensson, Chalmers University of Technology, SE-412 96 G?oteborg, Sweden
We investigate how to apply power-gating techniques to logic circuits for maximal total power reduction. We compare techniques that employ overdriven low-Vt power switches (SCCMOS) with those employing high-Vt power switches (MTCMOS). When sized under the same constraints for maximum voltage drop in active mode, MTCMOS has 10% shorter total wake-up time compared to SCCMOS. However, SCCMOS performs better in saving power than MTCMOS as logic circuit blocks increase in size and have increasing lengths of idle time. To obtain maximal power savings in idle mode, we introduce a process variation tolerant control circuit for overdrive voltage generators that offers a 2.7? power savings improvement for a 130-nm process.
Citation:
Mindaugas Dra?zd?ziulis, Per Larsson-Edefors, Lars "J" Svensson , "Overdrive Power-Gating Techniques for Total Power Minimization," isvlsi, pp.125-132, IEEE Computer Society Annual Symposium on VLSI (ISVLSI '07), 2007
Usage of this product signifies your acceptance of the Terms of Use.