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AN SRAM WEAK CELL FAULT MODEL AND A DFT TECHNIQUE WITH A PROGRAMMABLE DETECTION THRESHOLD
Charlotte, NC, USA October 26-October 28
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ITC.2004.32International Test Conference 2004 (I ...
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Andrei Pavlov, University of Waterloo, Waterloo, ON, Canada
Manoj Sachdev, University of Waterloo, Waterloo, ON, Canada
Jose Pineda de Gyvez, Philips Research Labs, Eindhoven, Netherlands
SRAM cell stability has become an important design and test issue owing to significant process spreads, non-ideal operational conditions, and subtle manufacturing defects in scaled-down geometries. In this article, we carry out an extensive SRAM SNM sensitivity analysis and propose an SRAM cell stability fault model for weak cell detection. This fault model is used to design and verify a proposed digitally programmable design-for-test (DFT) technique targeting the weak cell detection in embedded SRAMs (eSRAM).
Citation:
Andrei Pavlov, Manoj Sachdev, Jose Pineda de Gyvez, "AN SRAM WEAK CELL FAULT MODEL AND A DFT TECHNIQUE WITH A PROGRAMMABLE DETECTION THRESHOLD," itc, pp.1006-1015, International Test Conference 2004 (ITC'04), 2004
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