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Strained Si and the Future Direction of CMOS, invited
Banff, Alberta, Canada July 20-July 24
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/IWSOC.2005.99Fifth International Workshop on Syste ...
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Scott E. Thompson, University of Florida
Uniaxial process induced strain is being adopted in all 90, 65, and 45 nm high performance logic technologies. Uniaxial strain offers large performance improvement at low cost and minimally increased manufacturing complexity and is scalable to future technology nodes.
Citation:
Scott E. Thompson, "Strained Si and the Future Direction of CMOS, invited," iwsoc, pp.14-16, Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05), 2005
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