Test Consideration for Nanometer-Scale CMOS Circuits

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http://doi.ieeecomputersociety.org/10.1109/MDT.2006.52

March/April 2006 (vol. 23 no. 2) pp. 128-136

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	Kaushik Roy, T.M. Mak, Kwang-Ting (Tim) Cheng, "Test Consideration for Nanometer-Scale CMOS Circuits," IEEE Design and Test of Computers, vol. 23, no. 2, pp. 128-136, March/April, 2006.

	BibTex	x
	@article{ 10.1109/MDT.2006.52, author = {Kaushik Roy and T.M. Mak and Kwang-Ting (Tim) Cheng}, title = {Test Consideration for Nanometer-Scale CMOS Circuits}, journal ={IEEE Design and Test of Computers}, volume = {23}, number = {2}, issn = {0740-7475}, year = {2006}, pages = {128-136}, doi = {http://doi.ieeecomputersociety.org/10.1109/MDT.2006.52}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - MGZN JO - IEEE Design and Test of Computers TI - Test Consideration for Nanometer-Scale CMOS Circuits IS - 2 SN - 0740-7475 SP128 EP136 EPD - 128-136 A1 - Kaushik Roy, A1 - T.M. Mak, A1 - Kwang-Ting (Tim) Cheng, PY - 2006 KW - deep-submicron test KW - nanometer technologies KW - statistical timing KW - delay test VL - 23 JA - IEEE Design and Test of Computers ER -

Kaushik Roy, Purdue University

T.M. Mak, Intel

Kwang-Ting (Tim) Cheng, Universityy of California, Santa Barbara

Editor's note: Test technology faces new challenges as faults with increasingly complex behavior become predominant. Design approaches aimed at fixing some of the undesirable effects of nanometric technologies could jeopardize current test approaches. This article describes possible solutions to many of these challenges, including statistical timing and delay test, IDDQ test under exponentially increasing leakage, and power or thermal management architectures. --Michael Nicolaidis, iRoC Technologies

Index Terms:

deep-submicron test, nanometer technologies, statistical timing, delay test

Citation:

Kaushik Roy, T.M. Mak, Kwang-Ting (Tim) Cheng, "Test Consideration for Nanometer-Scale CMOS Circuits," IEEE Design and Test of Computers, vol. 23, no. 2, pp. 128-136, Mar./Apr. 2006, doi:10.1109/MDT.2006.52

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