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Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems
Hyderabad, India January 03-January 07
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VLSID.2006.9319th International Conference on VLSI ...
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Jayakumaran Sivagnaname, Hung C. Ngo, Kevin J. Nowka, Robert K. Montoye, Richard B. Brown, "Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems," VLSI Design, International Conference on, pp. 89-93, 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006.
 
 
BibTex
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@article{ 10.1109/VLSID.2006.93,
author = {Jayakumaran Sivagnaname and Hung C. Ngo and Kevin J. Nowka and Robert K. Montoye and Richard B. Brown},
title = {Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2006},
issn = {1063-9667},
pages = {89-93},
doi = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2006.93},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems
SN - 1063-9667
SP89
EP93
A1 - Jayakumaran Sivagnaname,
A1 - Hung C. Ngo,
A1 - Kevin J. Nowka,
A1 - Robert K. Montoye,
A1 - Richard B. Brown,
PY - 2006
KW - null
VL - 0
JA - VLSI Design, International Conference on
ER -
 
Jayakumaran Sivagnaname, University of Michigan
Hung C. Ngo, IBM Austin Research Lab.
Kevin J. Nowka, IBM Austin Research Lab.
Robert K. Montoye, IBM Austin Research Lab.
Richard B. Brown, University of Utah
Wide circuit implementation of Limited Switch Dynamic Logic (LSDL), a high performance logic circuit, with a modified pseudo-nMOS style load has been studied in this paper. A conventional two levels of 8-way mux implementation and a wide 64-way mux implementation of the 64-bit rotator circuit were used in the analysis. The resultant wide circuit implementation consumes less power, maintains robustness to noise and power rail bounce and reduces the pipeline depth to a single stage. The effect of process variation on circuit performance is evaluated. Based on the analysis, a new circuit style known as hybrid LSDL has been proposed.
Citation:
Jayakumaran Sivagnaname, Hung C. Ngo, Kevin J. Nowka, Robert K. Montoye, Richard B. Brown, "Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems," vlsid, pp.89-93, 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006
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