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A 3-dimensional FEM Based Resistance Extraction
Bangalore, India January 06-January 10
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.820th International Conference on VLSI ...
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Subramanian Rajagopalan, Advanced Technology Group, Synopsys India Pvt Ltd
Shabbir Batterywala, Advanced Technology Group, Synopsys India Pvt Ltd
Accurate extraction of parasitics is an important pre-cursor to timing and signal integrity analysis. In deep sub-miron technologies, the interconnect cross-section areas of metal at various points in a layer are no longer the same - the metal can be etched differently with varying width and spacings and/or the top-surface of the interconnect layer may be non-planar due to Chemical Mechanical Polishing(CMP). Morever, the cross-sections are also becoming increasingly trapezoidal in nature. In such a scenario, computing resistances using counting squares technique and other two-dimensional methods may no longer be accurate. At the same time, using highly accurate techinques such as a fine-grained Finite Element Method (FEM) may not be feasible due to the large computation time. In this work, a three-dimensional FEM based resistance extractor that is fast and accurate has been implemented and compared with two other extractors, a counting squares based extractor and a meshing based extractor. The key behind this is an efficient domain discretization which is a Conformal decomposition of the original geometry.
Citation:
Subramanian Rajagopalan, Shabbir Batterywala, "A 3-dimensional FEM Based Resistance Extraction," vlsid, pp.565-570, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007
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