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Impact of Modern Process Technologies on the Electrical Parameters of Interconnects
Bangalore, India January 06-January 10
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.9020th International Conference on VLSI ...
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Debjit Sinha, Northwestern University, Evanston, IL
Jianfeng Luo, ATG, Synopsys Inc., Mountain View, CA 94085, USA
Subramanian Rajagopalan, ATG, Synopsys India Pvt. Ltd., Bangalore, India
Shabbir Batterywala, ATG, Synopsys India Pvt. Ltd., Bangalore, India
Narendra V Shenoy, ATG, Synopsys Inc., Mountain View, CA 94085, USA
Hai Zhou, Northwestern University, Evanston, IL
This paper presents the results obtained from an experimental study of the impact of modern process technologies on the electrical parameters of interconnects. Variations in parasitic capacitances and resistances due to dummy metal fills, chemical mechanical polishing, multiple thin inter-layer dielectrics and trapezoidal conductor crosssections are presented. Accurate variations in the parasitics are reported for a set of timing critical nets using 3d field solvers for extraction. Results obtained on a set of industrial designs show that the impact of dummy fills and trapezoidal conductor cross-sections are significant.
Citation:
Debjit Sinha, Jianfeng Luo, Subramanian Rajagopalan, Shabbir Batterywala, Narendra V Shenoy, Hai Zhou, "Impact of Modern Process Technologies on the Electrical Parameters of Interconnects," vlsid, pp.875-880, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007
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